| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY DIODES AND BENEFITS 1 3 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC co |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited fo |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 isolated TOP3I (Plastic) BYW99PI- |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. November 1994 1/5 BYW 98-50 → 200 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25°C Tj = 10 |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS ro )s SUITED FOR SMPS P t(ss VERY LOW FORWARD LOSSES te cs NEGLIGIBLE SWITCHING LOSSES le us HIGH SURGE CURRENT CAPABILITY so rods INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : b PInsulation voltage = 2000 V DC - O teCapacitance = 12 pF |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS 1 3 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC co |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY DIODES AND BENEFITS 1 3 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY SMD PACKAGE DESCRIPTION Single rectifier suited for switchmode power supply and high frequency DC to DC co |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited fo |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited fo |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bsoDESCRIPTI |
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