| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES 25°C Test Conditions VR = VRRM IF = 3A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 150 Unit ns To evaluate the conduction losses use the following equati |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 |
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STMicroelectronics |
ULTRAFAST POWER RECTIFIER DIODE AND BENEFITS n 2 x100 A 400 V 1.4 V A1 A2 K1 K2 2 1 1= 2= 3= 4= A1 K1 A2 K2 4 n n n LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE : 2500 VDC CAPACITANCE 42pF 3 DESCRIPTION High current power r |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE ARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 30A Test Conditions VR = VRRM Min. Typ. Max. 100 5 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 1A IF = 0.5A diF/dt = - 15A/µs IR = |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
48-96 Kbyte ROM HCMOS MCU eight, scrolling, cursor, full background color, half- c intensity color, translucency and half-tone du modes ro s Teletext unit, including Data Slicer, Acquisition Unit and up to 8 Kbytes RAM for data storage P s VPS and Wide Screen Signalling slice |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES F Tj = 25°C Tj = 100°C IF = 1A Test Conditions VR = VRRM Min. Typ. Max. 20 0.5 1.5 1.4 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Tj = 25°C Test Conditions IF = 1A IF = 0.5A diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. Ma |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING DESCRIPTION Free wheeling diode in converters and motor control circuits. Rectifiers in S.M.P.S. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IFRM IF (AV) IF |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES °C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 35 2 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE CTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 12A Test Conditions VR = VRRM Min. Typ. Max. 50 2.5 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C IF = 1A IF = 0.5A Test Conditions diF/dt = - 15A/µs IR = 1A |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance< 5 nH DESCRIPTION Dual high voltage rectifier devices are suited |
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