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STMicroelectronics |
N-Channel MOSFET °C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 60 V 60 V ±20 V 120 A BUZ11S2 BUZ11S2FI 30 20 A 75 |
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STMicroelectronics |
N-Channel Power MOSFET datasheet. o o Value 50 50 ± 20 23 92 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C February 2000 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.0 62.5 o o |
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STMicroelectronics |
N-Channel MOSFET re DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) • Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 19 A 75 A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 187 BUZ21 THERMAL DATA Rthj _case Thermal |
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STMicroelectronics |
N-Channel MOSFET tion at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 50 V 50 V ±20 V 120 A BUZ 11 BUZ11FI 30 |
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STMicroelectronics |
N-Channel MOSFET is datasheet. o o Value 50 50 ± 20 26 104 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o |
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STMicroelectronics |
N-Channel MOSFET humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) • Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 12 A 48 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 183 BUZ20 THERMAL DATA Rthj _case Thermal resistan |
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STMicroelectronics |
N-Channel MOSFET °C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 60 V 60 V ±20 V 120 A BUZ11S2 BUZ11S2FI 30 20 A 75 |
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STMicroelectronics |
N-Channel MOSFET perature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 50 V 50 V ±20 V 17 A 65 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 163 BUZ10A THERMAL DATA Rthj _case |
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STMicroelectronics |
N-CHANNEL MOSFET datasheet. o o Value 50 50 ± 20 33 134 90 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C |
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STMicroelectronics |
N-Channel MOSFET temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) • Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 19 A 75 A 78 W -55 to 150 °C 150 °C C 55/150/56 1/4 191 BUZ25 THERMAL DATA Rthj _case |
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STMicroelectronics |
N-Channel MOSFET N humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 500 V 500 V ±20 V 8 A 32 A 125 W -55 to 150 °C 150 °C E 551150/56 1/4 257 BUZ354 THERMAL DATA Rthj _ case Thermal resistance junction-case Rthj _ amb |
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STMicroelectronics |
N-Channel MOSFET 400 V ±20 V 2.6 A 10 A 40 W -55 to 150 °C 150 °C E 55/150/56 1/4 249 BUZ76A THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _ amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C |
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STMicroelectronics |
N-Channel MOSFET 30°C Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) - See note on ISOWATT 220 in this datasheet June 1988 50 V 50 V ±20 V 56 A BU |
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STMicroelectronics |
N-Channel MOSFET 400 V ±20 V 4.5 A 18 A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 219 BUZ60B THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _amb Thermal resistance junction-ambient max 1.67 °CIW max 75 °CIW ELECTRICAL CHARACTERI |
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STMicroelectronics |
N-Channel MOSFET V ±20 V 5.5 A 22 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 215 BUZ60 THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _amb Thermal resistance junction-ambient max max 1.67 75 °C/W °C/W ELECTRICAL CHARACTERISTICS (T |
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STMicroelectronics |
N-Channel MOSFET 500 V 500 V ±20 V 8.3 A 33 A 125 W -55 to 150 °C 150 °C C 55/150/56 1/4 211 BUZ45A THERMAL DATA Rthi - case Thermal resistance junction-case max Rthj _amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (T |
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STMicroelectronics |
N-CHANNEL POWER MOSFET this datasheet. o o Value 50 50 ± 20 17 68 60 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ71 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 62.5 o o |
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STMicroelectronics |
N-Channel Power MOSFET ure Max. Operating Junction Temperature o o Value BUZ80FI 800 800 ± 20 3.4 2.1 13 100 0.8 -65 to 150 150 2.1 1.3 13 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area November 1996 1/10 BUZ80/FI T |
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STMicroelectronics |
N-Channel Power MOSFET ure Max. Operating Junction Temperature o o Value BUZ80FI 800 800 ± 20 3.4 2.1 13 100 0.8 -65 to 150 150 2.1 1.3 13 40 0.32 2000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area November 1996 1/10 BUZ80/FI T |
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STMicroelectronics |
N-Channel MOSFET ax. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 500 V 500 V ±20 V 9.5 A 38 A 125 W -55 to 150 °C 150 °C E 55/150/56 1/4 253 BUZ353 THERMAL DATA Rthj _ case Therm |
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