STMicroelectronics BD9 fiche technique

No.	Partie #	Fabricant	Description
1	BD911	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB =
2	BD910	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB =
3	BD912	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB =
4	BD909	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB =