STMicroelectronics BD6 fiche technique

No.	Partie #	Fabricant	Description
1	BD680A	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
2	BD670	STMicroelectronics	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 25 C Storage Temperature Max. O perating Junction Temperature o Value BD677/A BD678/A 60 60 BD679/A BD680/A 80 80 5 4 6 0.1 40 -65 to 150 150 BD681 BD682 100 100 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative.
3	BD679A	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
4	BD680	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
5	BD678	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
6	BD679	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
7	BD677	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
8	BD677A	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
9	BD678A	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
10	BD682	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan
11	BD681	STMicroelectronics	Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base islan