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STMicroelectronics |
STP7NK40ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STB7NK80Z Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
STW7NK90Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-Channel MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP7NK40Z 400 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 1Ω ID 5.4 A • Switching applications G(1) Description |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc ■ 100% avalanche tested rod ■ Extremely high dv/dt capability P ■ Gate charge minimized te ■ Very low intrinsi |
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STMicroelectronics |
STP7NK80Z Type STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 ■ ■ ■ ■ ■ VDSS (@Tjmax) 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A 1 2 3 TO-220 TO-220FP Extremely high dv/dt capability 100% avalange tested Gate charge minim |
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STMicroelectronics |
N-channel MOSFET Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
STP7NK30Z Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc ■ 100% avalanche tested rod ■ Extremely high dv/dt capability P ■ Gate charge minimized te ■ Very low intrinsi |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS STD7NK40ZT4 400 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 1Ω ID 5.4 A Applications • Switching applications Description AM01476v1_tab This high-voltage |
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STMicroelectronics |
STP7NK80ZFP Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 1 3 2 STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z ■ ■ ■ ■ ■ 5.8 A 5.8 A TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate cha |
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