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STMicroelectronics |
STP4NK60Z TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP14NK60ZFP Type STP14NK60Z STP14NK60ZFP STB14NK60Z STB14NK60Z-1 STW14NK60Z VDSS 600V 600V 600V 600V 600V RDS(on) ID <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A Pw 160W 40W 160W 160W 160W ■ Extremely high dv/dt capability ■ 100% avalanche te |
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STMicroelectronics |
STP4NK80Z www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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STMicroelectronics |
N-Channel MOSFET Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z VDSS 500V 500V 500V 500V 500V RDS(on) ID <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A Pw 150W 35W 150W 150W 150W ■ Extremely high dv/dt capability ■ 100% avalanche tested |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications |
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STMicroelectronics |
STP14NK50Z Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z ■ ■ ■ ■ ■ VDSS 500V 500V 500V 500V 500V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 14A 14A 14A 14A 14A Pw 150W 1 3 2 3 1 2 35W 150W 150W 150W TO-220 TO-220FP TO-247 3 12 3 1 |
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STMicroelectronics |
STP4NK80ZFP www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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STMicroelectronics |
STB14NK60Z TAB TAB Order codes VDS RDS(on) max. ID PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete ProducTO-247 bsoFigure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.5 A 160 W STW1 |
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STMicroelectronics |
N-Channel MOSFET Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z VDSS 500V 500V 500V 500V 500V RDS(on) ID <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A Pw 150W 35W 150W 150W 150W ■ Extremely high dv/dt capability ■ 100% avalanche tested |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications |
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STMicroelectronics |
N-CHANNEL Power MOSFET TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP4NK50Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications AM01476v1_tab Descriptio |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order code VDS RDS(on) max. ID STD4NK60ZT4 600 V 2Ω 4A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Application |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STD4NK50Z-1 STD4NK50ZT4 500 V 2.7 Ω • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected PTOT 45 W Package IPAK DPAK G(1) Application |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications |
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STMicroelectronics |
N-Channel Power MOSFET TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT ID STP4NK60Z 600 V 2Ω 70 W 4 A STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected Figure 1. Internal schematic diagram D(2, TAB) G(1) |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt cap |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt cap |
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