| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory M29F200BB Device Code: 00D4h A0-A16 W E G RP VCC s 17 15 DQ0-DQ14 DQ15A –1 M29F200BT M29F200BB BYTE RB s s s s VSS AI02912 October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details ar |
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STMicroelectronics |
M29F400T asymmetrically blocked architecture providing system memory integration. Both M29F400T and M29F400B devices have an array of 11 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes |
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STMicroelectronics |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory dergoing evaluation. Details are subject to change without notice. 1/20 M29F010B Figure 2A. PLCC Connections Figure 2B. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 A11 A9 A8 A13 A14 NC W VCC NC A16 A15 A12 A7 A |
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STMicroelectronics |
4-Mbit Single Supply Flash Memory M) Figure 1. Logic Diagram VCC 18 A0-A17 15 DQ0-DQ14 W DQ15A –1 M29F400BT E M29F400BB BYTE G RB RP VSS AI02904 July 2000 1/22 M29F400BT, M29F400BB Figure 2. TSOP Connections A15 1 48 A16 A14 BYTE A13 VSS A12 DQ15A –1 A11 DQ |
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STMicroelectronics |
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory is not available. 3/22 M29F002BT, M29F002BB, M29F002BNT Table 3A. M29F002BT, M29F002BNT Block Addresses Size (Kbytes) 16 8 8 32 64 64 64 Address Range 3C000h-3FFFFh 3A000h-3BFFFh 38000h-39FFFh 30000h-37FFFh 20000h-2FFFFh 10000h-1FFFFh 00000h-0FFFFh |
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STMicroelectronics |
4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory mm Figure 1. Logic Diagram VCC 19 A0-A18 8 DQ0-DQ7 W E G M29F040 VSS AI01372 November 1999 This is information on a product still in production but not recommended for new designs. 1/31 M29F040 Figure 2A. LCC Pin Connections Figure 2B. TSO |
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STMicroelectronics |
M29F200BB O44 (M) Figure 1. Logic Diagram VCC 17 A0-A16 15 DQ0-DQ14 W DQ15A –1 M29F200BT E M29F200BB BYTE G RB RP VSS AI02912 October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject |
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STMicroelectronics |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory ode: 00ECh – M29F800AB Device Code: 0058h s s VSS AI02198B January 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/21 M29F800AT, M29F800AB Figure |
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STMicroelectronics |
Boot Block Single Supply Flash Memory 22CCh – Bottom Device Code M29F160BB: 224Bh A0-A19 W E G RP VCC s 20 15 DQ0-DQ14 DQ15A –1 M29F160BT M29F160BB BYTE RB s s s s VSS AI02920 March 2000 This is preliminary information on a new product now in development or undergoing evaluatio |
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STMicroelectronics |
Boot Block Single Supply Flash Memory 22CCh – Bottom Device Code M29F160BB: 224Bh A0-A19 W E G RP VCC s 20 15 DQ0-DQ14 DQ15A –1 M29F160BT M29F160BB BYTE RB s s s s VSS AI02920 March 2000 This is preliminary information on a new product now in development or undergoing evaluatio |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES AND BENEFITS dus Very Low Forward Losses ro )s Negligible switching losses P t(ss High surge current capability te cs Insulated packages (ISOWATT220AC, le uTO-220FPAC): dInsulation voltage: 2000 VDC so roTypical insulation capacitance = 12 pF K A NC |
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STMicroelectronics |
4-Mbit Single Supply Flash Memory M) Figure 1. Logic Diagram VCC 18 A0-A17 15 DQ0-DQ14 W DQ15A –1 M29F400BT E M29F400BB BYTE G RB RP VSS AI02904 July 2000 1/22 M29F400BT, M29F400BB Figure 2. TSOP Connections A15 1 48 A16 A14 BYTE A13 VSS A12 DQ15A –1 A11 DQ |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
8-bit microcontroller • Memories – 8 Kbytes single voltage Flash Program memory with Read-out protection – In-circuit programming and in-application programming (ICP and IAP) – 10K write/erase cycles guaranteed – Data retention: 20 years at 55 °C – Temperature ranges: – - |
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