| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 1 D²PAK TAB 3 2 |
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STMicroelectronics |
N-channel Power MOSFET Order code STW18N60DM2 VDS 600 V RDS(on) max. 0.295 Ω ID 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Application |
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STMicroelectronics |
N-channel Power MOSFET Type STD18NF03L VDSS 30V RDS(on) <0.05Ω ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested ID 17A Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STB18N60DM2 600 V 0.295 Ω • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 12 A Applic |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applicatio |
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STMicroelectronics |
Power MOSFET Order code STD18NF03L VDS 30 V RDS(on) max. < 50 mΩ ID 17 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This Power |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3 ■ ■ ■ 100 |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS @TJmax RDS(on) max. STF18N60M2 650 V 0.280 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters • Resonant |
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STMicroelectronics |
N-channel Power MOSFET TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STI18N65M2 STP18N65M2 VDS 650V RDS(on) max ID 0.33Ω 12 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanc |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
N-channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications G(1) |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND VDSS @ TJmax 650 V RDS(on) max ID <0.29 Ω 13 A • The worldwide best RDS(on)* area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charg |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. STF18N60M6 600 V 280 mΩ • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC c |
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STMicroelectronics |
N-Channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD18N60M6 600 V 280 mΩ 13 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected G(1) |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS RDS(on) max. ID STL18N65M5 650 V 240 mΩ 15 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications G(4) • Switching applications S(1, 2, 3) |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT TAB 23 1 DPAK C (2 or TAB) RG G (1) • AEC-Q101 qualified • SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low satura |
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STMicroelectronics |
N-channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications G(1) |
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STMicroelectronics |
N-Channel Power MOSFET 3 12 TO-220FP ultra narrow leads D(2) Order code V DS RDS(on) max ID STFU18N60M2 600 V 0.280 Ω 13 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switchi |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switchi |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5 ■ ■ ■ ■ VDSS @ TJmax RDS(on) max ID 3 3 12 1 2 TO-220FP 710 V < 0.22 Ω 15 A TAB I²PAK Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switchi |
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