| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS both Input and Output Rail to Rail (1.71 @ VCC = 1.8V, RL = 2kΩ), 120µA consumption current and 480kHz Gain Bandwidth Product. With a such low consumption and a sufficient GBP for many applications, this Op-Amp is very well-suited for any kind of bat |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC + + 0.2 V) ■ Low supply current (120 μA) ■ Good accuracy (1 mV max for A version) ■ Gain bandwidth product (530 kHz) ■ High unity gain stabil |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC + + 0.2 V) ■ Low supply current (120 μA) ■ Good accuracy (1 mV max for A version) ■ Gain bandwidth product (530 kHz) ■ High unity gain stabil |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS both Input and Output Rail to Rail (1.71 @ VCC = 1.8V, RL = 2kΩ), 120µA consumption current and 480kHz Gain Bandwidth Product. With a such low consumption and a sufficient GBP for many applications, this Op-Amp is very well-suited for any kind of bat |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the l |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the l |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80185 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC + + 0.2 V) ■ Low supply current (120 μA) ■ Good accuracy (1 mV max for A version) ■ Gain bandwidth product (530 kHz) ■ High unity gain stabil |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the l |
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STMicroelectronics |
N-channel Power MOSFET Order code STH185N10F3-2 VDS 100 V RDS(on) max. 4.5 mΩ ID 180 A Figure 1: Internal schematic diagram D(TAB) G(1) AEC-Q101 qualified Ultra low on-resistance 100% avalanche tested Applications Switching applications Description This device |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS both Input and Output Rail to Rail (1.71 @ VCC = 1.8V, RL = 2kΩ), 120µA consumption current and 480kHz Gain Bandwidth Product. With a such low consumption and a sufficient GBP for many applications, this Op-Amp is very well-suited for any kind of bat |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STH185N10F3-2 VDS 100 V RDS(on) max. 4.5 mΩ ID 180 A Figure 1: Internal schematic diagram D(TAB) G(1) AEC-Q101 qualified Ultra low on-resistance 100% avalanche tested Applications Switching applications Description This device |
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