| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
ST1803DHI C C January 2000 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO www.DataSheet4U.com Parameter Collector Cut-off |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology g Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W January, 28 2003 1/4 LET8180 ELECTRICAL SPECIFICATION (TCASE = 2 |
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STMicroelectronics |
STE180NE10 Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SM |
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STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 10 2 15 -65 to 150 150 Unit V V V A A |
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STMicroelectronics |
MD1803DFX ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
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STMicroelectronics |
Automotive fully integrated H-bridge motor driver Type VNH5180A-E RDS(on) 180 mΩ max (per leg) Iout VCCmax 8 A 41 V ■ Output current: 8 A ■ 3 V CMOS compatible inputs ■ Undervoltage shutdown ■ Overvoltage clamp ■ Thermal shutdown ■ Cross-conduction protection ■ Current and power limitation ■ Ver |
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STMicroelectronics |
Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main |
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STMicroelectronics |
600W TVS • Peak pulse power: – 600 W (10/1000 μs) – up to 4 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 420 W (10/1000 µs) • Lead fini |
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STMicroelectronics |
TRISILTM n n n n n BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE SMA (JEDEC DO-214AA) SCHEMATIC DIAGRAM D |
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STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR x. Operating Junction Temperature Value 150 60 7 5 15 2 1.1 -65 to 150 150 Unit V V V A A A W o o C C September 2003 1/8 STSA1805 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-Ambient Thermal Resistance Junction-case Max Max 114 8 |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR unction Temperature December 2003 Value 1500 600 7 10 15 4 60 2500 -65 to 150 150 Unit V V V A A A W V oC oC 1/6 ST1803DFX THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.1 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless o |
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STMicroelectronics |
1500W TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 1100 W (10/1000 µs) • Lead fin |
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STMicroelectronics |
1500W TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 1100 W (10/1000 µs) • Lead fin |
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STMicroelectronics |
Proximity and ambient light sensor • Three-in-one smart optical module – Proximity sensor – Ambient Light Sensor – VCSEL light source • Fast, accurate distance ranging – Measures absolute range from 0 to above 10 cm – Independent of object reflectance – Ambient rejection – Crosstalk c |
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STMicroelectronics |
40A standard TRIAC • High current Triac • Low thermal resistance • BTA40 and BTA41 UL1557 recognized components (file ref: 81734) • RoHS (2002/95/EC) compliant packages • UL-94, V0 flammability package resin compliance Application • On/off function in static relays, he |
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STMicroelectronics |
Automotive 3000W TVS • AEC-Q101 qualified • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 µA at 25 °C • Operating Tj max: 175 °C • JEDEC regi |
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STMicroelectronics |
RF power LDMOS transistor Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56% • High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gat |
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STMicroelectronics |
RF power LDMOS transistor Order code f (MHz) VDD POUT Gain Efficiency RF2L16180CB4 1450 28 V 180 W 14 dB 60% • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Optimized for Doherty applications • Large |
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STMicroelectronics |
Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main |
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STMicroelectronics |
600W TVS • Peak pulse power: – 600 W (10/1000 μs) – up to 4 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 420 W (10/1000 µs) • Lead fini |
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