| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-Channel MOSFET Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150 • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, cr |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plasti |
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STMicroelectronics |
N-Channel MOSFET 151 152 150FI 151FI 152FI 153 153FI Vos * VOGR * VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 Kn) Gate-source voltage Drain current (pulsed) 100 60 100 60 100 60 100 60 ±20 160 160 140 140 150 151 152 153 10 |
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STMicroelectronics |
ADJUSTABLE VOLTAGE REGULATORS THREE-TERMINAL 3 A stance Rth(j-a) Max Junction-Ambient Thermal Resistance Value 1.5 35 o o Unit C/W C/W SCHEMATIC DIAGRAM 2/7 LM150-LM250-LM350 ELECTRICAL CHARACTERISTICS LM150: -55 oC ≤ T j ≤ 150 oC, VI - VO = 5V, IO = 1.5A LM250: -25 oC ≤ T j ≤ 150 oC, VI - VO = |
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STMicroelectronics |
1500W TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 1100 W (10/1000 µs) • Lead fin |
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STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Intern |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Swi |
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STMicroelectronics |
Schottky rectifier • Forward current: 2 x 30 A • Repetitive peak reverse voltage: 150 V • Low forward voltage drop • dV/dt up to 10 kV/µs • Monolithic dual die - common cathode • Hermetic package • TID and SEE characterized • Package mass: 0.92 g • ESCC qualified : 510 |
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STMicroelectronics |
8/16-bit single voltage Flash MCU 8/16-bit single voltage Flash MCU family with RAM, E³ ™ (emulated EEPROM), CAN 2.0B and J1850 BLPD Datasheet − production data ■ Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM (Emulated EEPROM) |
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STMicroelectronics |
ADJUSTABLE VOLTAGE REGULATORS THREE-TERMINAL 3 A stance Rth(j-a) Max Junction-Ambient Thermal Resistance Value 1.5 35 o o Unit C/W C/W SCHEMATIC DIAGRAM 2/7 LM150-LM250-LM350 ELECTRICAL CHARACTERISTICS LM150: -55 oC ≤ T j ≤ 150 oC, VI - VO = 5V, IO = 1.5A LM250: -25 oC ≤ T j ≤ 150 oC, VI - VO = |
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STMicroelectronics |
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE AND BENEFITS s 6A 1500 V 1.65 V 135 ns K A s s s s s s High breakdown voltage capability High frequency operation Specified turn on switching characteristics Very fast recovery diode Low static and peak forward voltage drop for low dissipat |
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STMicroelectronics |
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE AND BENEFITS s 6A 1500 V 1.65 V 135 ns K A s s s s s s High breakdown voltage capability High frequency operation Specified turn on switching characteristics Very fast recovery diode Low static and peak forward voltage drop for low dissipat |
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STMicroelectronics |
1500w TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 µA at 25 °C • Operating Tj max: 150 °C • High power capability at Tj max |
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STMicroelectronics |
1500w TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 µA at 25 °C • Operating Tj max: 150 °C • High power capability at Tj max |
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STMicroelectronics |
1500W TVS • Peak pulse power: – 1500 W (10/1000 μs) – up to 10 kW (8/20 μs) • Stand-off voltage range from 5 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 1100 W (10/1000 µs) • Lead fin |
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STMicroelectronics |
N-channel Power MOSFET Type VDSSS RDS(on) ID STD150NH02L )STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ct(s ■ RDS(on) * Qg industry’s benchmark u ■ Conduction losses reduced rod ) ■ Switching losses reduced P t(s ■ Low threshold device lete ducDescription so roT |
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STMicroelectronics |
bridge rectifier diode Product status link STBR1508-Y Product summary Symbol Value IF(AV) 15 A VRRM 800 V Tj -40 to +175 °C VF (typ.) 0.88 V • AEC-Q101 qualified • PPAP capable • Ultralow conduction losses • Ultralow reverse losses • VRRM guaranteed from -40 t |
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STMicroelectronics |
150mA dual DC-DC converter ■ Step-up with LDO and inverter converters ■ Operating input voltage range from 2.3 V to 4.8 V ■ Synchronous rectification for both DC-DC converters ■ Minimum 150 mA output current ■ LDO post regulator for 4.6 V fixed positive output to provide line |
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STMicroelectronics |
N-channel MOSFET Type STW9N150 VDSS 1500 V RDS(on) < 2.5 Ω ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance ID Pw 8 A 320 W Application ■ Switching applicati |
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STMicroelectronics |
8/16-bit single voltage Flash MCU 8/16-bit single voltage Flash MCU family with RAM, E³ ™ (emulated EEPROM), CAN 2.0B and J1850 BLPD Datasheet − production data ■ Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM (Emulated EEPROM) |
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