| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
short-circuit rugged IGBT ■ ■ ■ ■ ■ TAB 2 TAB Short circuit withstand time 10µs. Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode 3 1 1 |
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STMicroelectronics |
STW14NC50 rent (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 14 8.7 56 190 1.5 3.5 –65 to 150 150 (1)I |
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STMicroelectronics |
N-channel Power MOSFET Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 12 A 12 A 12 A(1) 12 A 12 A 1. Limited only by maximum temperature allowed ■ 100 |
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STMicroelectronics |
STP14NK60ZFP Type STP14NK60Z STP14NK60ZFP STB14NK60Z STB14NK60Z-1 STW14NK60Z VDSS 600V 600V 600V 600V 600V RDS(on) ID <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A <0.5Ω 13.5A Pw 160W 40W 160W 160W 160W ■ Extremely high dv/dt capability ■ 100% avalanche te |
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STMicroelectronics |
N-Channel MOSFET Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z VDSS 500V 500V 500V 500V 500V RDS(on) ID <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A Pw 150W 35W 150W 150W 150W ■ Extremely high dv/dt capability ■ 100% avalanche tested |
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STMicroelectronics |
N-Channel MOSFET 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% * 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A • 100% avalanche tested • L |
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STMicroelectronics |
fully autoprotected Power MOSFET TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through inpu |
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STMicroelectronics |
STP14NK50Z Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z ■ ■ ■ ■ ■ VDSS 500V 500V 500V 500V 500V RDS(on) <0.38Ω <0.38Ω <0.38Ω <0.38Ω <0.38Ω ID 14A 14A 14A 14A 14A Pw 150W 1 3 2 3 1 2 35W 150W 150W 150W TO-220 TO-220FP TO-247 3 12 3 1 |
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STMicroelectronics |
N-CHANNEL Power MOSFET |
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STMicroelectronics |
fully autoprotected Power MOSFET TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through inpu |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
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STMicroelectronics |
STB14NK60Z TAB TAB Order codes VDS RDS(on) max. ID PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete ProducTO-247 bsoFigure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.5 A 160 W STW1 |
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STMicroelectronics |
N-Channel MOSFET Type STP14NK50Z STP14NK50ZFP STB14NK50Z STB14NK50Z-1 STW14NK50Z VDSS 500V 500V 500V 500V 500V RDS(on) ID <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A <0.38Ω 14A Pw 150W 35W 150W 150W 150W ■ Extremely high dv/dt capability ■ 100% avalanche tested |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram ' 7$% * 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A • 100% avalanche tested • Low |
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STMicroelectronics |
IGBT Type STGB14NC60K STGD14NC60K VCES VCE(sat) (Max)@ 25°C IC @100°C 600V 600V <2.5V <2.5V 14A 14A ■ Low on-voltage drop (Vcesat) ■ Low Cres / Cies ratio ( no cross conduction susceptibility) ■ Short circuit withstand time 10µs Description Using |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD14NM50NAG VDS 500 V RDS(on) max. 0.320 Ω ID 12 A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S(3) Description AM0147 |
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STMicroelectronics |
fully autoprotected Power MOSFET Type VNS14NV04P-E RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Dire |
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STMicroelectronics |
fully autoprotected Power MOSFET Type Vclamp RDS(on) Ilim VNB14N04 t(s)VNK14N04FM VNV14N04 42 V 42 V 42 V 0.07 Ω 0.07 Ω 0.07 Ω 14 A 14 A 14 A ducs Linear current limitation ros Thermal shutdown Ps Short circuit protection tes Integrated clamp oles Low current drawn from inp |
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STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpo |
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STMicroelectronics |
fully autoprotected Power MOSFET TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 RDS(on) 35 mΩ Ilim 12 A Vclamp 40 V ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through inpu |
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