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ST Microelectronics |
N-Channel Power MOSFET Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitan |
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STMicroelectronics |
STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and |
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STMicroelectronics |
STW20NC50 in Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 18.4 11.6 73.6 220 1.75 2 –65 to 15 |
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STMicroelectronics |
STW20NB50 due to the temperature rise at the high output can also be reduced. This stereo audio power IC, designed for car audio use, has two built−in channels to reduce the characteristic difference between L and R channels. It also contains various kind of p |
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STMicroelectronics |
STGW20NB60HD -Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value |
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STMicroelectronics |
N-Channel Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL Power MOSFET 220FP TO-247 PACKAGING TUBE TUBE TUBE June 2003 1/11 STP20NM60FD - STF20NM60D - STW20NM60FD ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter STP20NM60FD Value STF20NM60D STW20NM60FD Unit V V V 20 1 |
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STMicroelectronics |
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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ST Microelectronics |
N-CHANNEL Power MOSFET Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitan |
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ST Microelectronics |
N-CHANNEL Power MOSFET s) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 18.4 11.6 73.6 220 1.75 2 –65 to 150 150 (1)ISD ≤18.4A, |
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ST Microelectronics |
N-CHANNEL MOSFET 220FP TO-247 PACKAGING TUBE TUBE TUBE June 2003 1/11 http://www.Datasheet4U.com STP20NM60FD - STF20NM60D - STW20NM60FD ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter STP20NM60FD Value STF20NM60D |
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STMicroelectronics |
STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and |
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STMicroelectronics |
N-channel Power MOSFET Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Z |
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STMicroelectronics |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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ST Microelectronics |
N-CHANNEL Power MOSFET Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 20 14 80 214 1.42 20 –65 to 150 150 (1)ISD ≤ 20A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. |
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ST Microelectronics |
N-CHANNEL Power MOSFET TO-247 INTERNAL SCHEMATIC DIAGRAM Obsolete ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 A ID Drain Current (continuous) at TC = 100°C 12.6 A IDM ( |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
N-CHANNEL Power MOSFET nche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 20 120 120 480 350 2.33 1.5 4 -55 to 175 Unit V V V A A A W W/°C V/ns J °C ( • •) Pulse width limited by safe operating area. ( •) Current limited by package October 2002 (1) |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Appli |
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