| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
STU14NA50 |
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ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor TINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 o C o m o .c U 4 t e e h S a t a .D w w w DS(on) 1 2 3 |
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STMicroelectronics |
N-Channel Power MOSFET 3 12 TO-220FP ultra narrow leads D(2) Order code VDS STFU14N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on ) max. 0.445 Ω ID 12 A |
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