| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS both Input and Output Rail to Rail (1.71 @ VCC = 1.8V, RL = 2kΩ), 120µA consumption current and 480kHz Gain Bandwidth Product. With a such low consumption and a sufficient GBP for many applications, this Op-Amp is very well-suited for any kind of bat |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC + + 0.2 V) ■ Low supply current (120 μA) ■ Good accuracy (1 mV max for A version) ■ Gain bandwidth product (530 kHz) ■ High unity gain stabil |
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STMicroelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
low power operational amplifiers ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC+ + 0.2 V) ■ Low supply current (400 µA) ■ Gain bandwidth product (1.6 MHz) ■ High unity gain stability ■ ESD tolerance (2 kV) ■ Latch-up immu |
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STMicroelectronics |
12A SCR Symbol IT(RMS) V DRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A A G A K V mA K A G K A G A DESCRIPTION Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes o |
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ST Microelectronics |
N-CHANNEL PowerMESH MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th |
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STMicroelectronics |
High surge voltage 1.25A SCR • On-state rms current, IT(RMS) 1.25 A • Repetitive peak off-state voltage, VDRM/VRRM, 700 V • Non-repetitive direct surge peak off-state voltage, 1250 V • Non-repetitive reverse surge peak off-state voltage, 850 V • Triggering gate current, |
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ST Microelectronics |
N-CHANNEL PowerMESH MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC + + 0.2 V) ■ Low supply current (120 μA) ■ Good accuracy (1 mV max for A version) ■ Gain bandwidth product (530 kHz) ■ High unity gain stabil |
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STMicroelectronics |
Sensitive SCR On-state RMS current, IT(RMS) 12 A Repetitive peak off-state voltage, VDRM/VRRM 600 V Triggering gate current, IGT 200 µA ECOPACK®2 compliant component Applications Capacitive ignition circuit for motorcycle engine DC brush motor drive f |
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STMicroelectronics |
1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS both Input and Output Rail to Rail (1.71 @ VCC = 1.8V, RL = 2kΩ), 120µA consumption current and 480kHz Gain Bandwidth Product. With a such low consumption and a sufficient GBP for many applications, this Op-Amp is very well-suited for any kind of bat |
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STMicroelectronics |
Sensitive SCR On-state RMS current, IT(RMS) 12 A Repetitive peak off-state voltage, VDRM/VRRM 600 V Triggering gate current, IGT 200 µA ECOPACK®2 compliant component Applications Capacitive ignition circuit for motorcycle engine DC brush motor drive f |
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STMicroelectronics |
low power operational amplifiers ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC+ + 0.2 V) ■ Low supply current (400 µA) ■ Gain bandwidth product (1.6 MHz) ■ High unity gain stability ■ ESD tolerance (2 kV) ■ Latch-up immu |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) ID STS14N3LLH5 30 V <0.006 Ω 14 A (1) )1. The value is rated according Rthj-pcb t(s ■ RDS(on) * Qg industry benchmark uc ■ Extremely low on-resistance RDS(on) d ■ Very low switching gate charge ro ■ High avalanche ruggedness P ■ |
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STMicroelectronics |
SENSITIVE SCR On-state RMS current, IT(RMS) 12 A Repetitive peak off-state voltage, VDRM/VRRM 600 V Triggering gate current, IGT 200 µA ECOPACK®2 compliant component Applications Capacitive ignition circuit for motorcycle engine DC brush motor drive f |
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STMicroelectronics |
12A SCR Symbol IT(RMS) V DRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A A G A K V mA K A G K A G A DESCRIPTION Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes o |
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STMicroelectronics |
low power operational amplifiers ■ Operating range from VCC = 1.8 to 6 V ■ Rail-to-rail input and output ■ Extended Vicm (VCC- - 0.2 V to VCC+ + 0.2 V) ■ Low supply current (400 µA) ■ Gain bandwidth product (1.6 MHz) ■ High unity gain stability ■ ESD tolerance (2 kV) ■ Latch-up immu |
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ST Microelectronics |
N-CHANNEL PowerMESH MOSFET t (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Peak Diode Recovery voltage slope Value 450 450 ± 30 0.40 0.25 1 |
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ST Microelectronics |
N-CHANNEL PowerMESH MOSFET TYPE STS12NH3LL s s s s s Figure 1: Package RDS(on) < 0.0105 Ω ID 12 A VDSS 30 V TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE LOW INPUT CAPACITANCE SO-8 DESCRIPTION The STS12 |
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ST Microelectronics |
N-CHANNEL PowerMESH MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s |
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