| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
High temperature 40A SCRs • High junction temperature : Tj = 150 °C • High noise immunity dV/dt = 500 V/µs up to 150 °C • Gate triggering current IGT = 15 mA • Off-state voltage 600 V VDRM/VRRM • High turn on current rise dI/dt = 100 A/µs • ECOPACK2 compliant component Applic |
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STMicroelectronics |
40A 1200V automotive grade thyristor A G K NCK K K K K G A A HU3PAK Product status TN4050HP-12L2Y Product summary IT(RMS) 40 A VDRM/VRRM 1200 V VDSM/VRSM 1400 V IGT 50 mA Tj -40 to 150 °C • AEC-Q101 qualified • High junction temperature: 150 °C • AC off state voltage: + |
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STMicroelectronics |
High temperature 40A SCRs High junction temperature: Tj = 150 °C High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA Off-state voltage 600 V VDRM/VRRM High turn on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component Applic |
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STMicroelectronics |
40A 1200V automotive grade thyristor G K A K G K D²PAK HV Product status TN4050HP-12G2YTR Product summary IT(RMS) 40 A VDRM/VRRM 1200 V VDSM/VRSM 1400 V IGT 50 mA Tj -40 to 150 °C • AEC-Q101 qualified • High junction temperature: 150 °C • AC off state voltage: +/- 1200 |
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STMicroelectronics |
40A 1200V automotive grade thyristor A G K A K G Product status TN4050HA-12GY Product summary IT(RMS) 40 A VDRM/VRRM 1200 V VDSM/VRSM 1400 V IGT 50 mA Tj -40 to 150 °C • AEC-Q101 qualified • Max. blocking voltage = VDRM, VRRM = 1200 V • Max. surge voltage = VDSM, VRSM = 1 |
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STMicroelectronics |
40A 1200V automotive grade thyristor • AEC-Q101 qualified • High junction temperature: 150 °C • AC off state voltage: +/- 1200 V • Nominal on-state RMS current: 40 ARMS • High EFT noise immunity: 1000 V/μs • Max. gate triggering current: 50 mA • ECOPACK2 compliant component Applications |
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STMicroelectronics |
automotive grade SCR thyristor • AEC-Q101 qualified • High junction temperature: 150 °C • AC off state voltage: ±800 V • Nominal RMS on-state current: 40 ARMS • High EFT noise immunity: 1000 V/µs • Maximum IGT = 35 mA • ECOPACK2 compliant component Applications • Batter |
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ST Microelectronics |
40A SCRs Symbol IT(RMS) VDRM/VRRM IGT Value 40 600 35 Unit A V mA G A K A DESCRIPTION The TN4035-600G is designed for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies. Using cli |
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STMicroelectronics |
High temperature 40A SCRs High junction temperature: Tj = 150 °C High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA Peak off-sate voltage 600 V VDRM/VRRM High turn on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component |
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STMicroelectronics |
Automotive-grade N-channel MOSFET Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications G(1) Description This Power MOSFET has been devel |
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STMicroelectronics |
Standard SCR • Max. Repetitive Blocking Voltage = VDRM, VRRM = 1200 V • IGT maximum = 50 mA • High static and dynamic commutation: – dI/dt = 100 A/µs – dV/dt = 2000 V/µs • ECOPACK®2 component (RoHS and HF compliance) • Complies with UL 1557 standard (File ref : E |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT-223 INTERNA |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC |
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STMicroelectronics |
N-Channel Power MOSFET Order code STN4NF20L VDSS 200 V RDS(on) max. < 1.5 Ω ■ 100% avalanche tested ■ Low gate charge ■ Exceptional dv/dt capability ID 1A Application Switching applications Description This N-channel 200 V realized with STMicroelectronics unique STr |
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STMicroelectronics |
40A 1200V automotive grade thyristor • AEC-Q101 qualified • High junction temperature: 150 °C • AC off state voltage: +/- 1200 V • Nominal on-state RMS current: 40 ARMS • High noise immunity: 1000 V/μs • Max. gate triggering current: 50 mA • ECOPACK2 compliant component Applications • O |
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