| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
ST1803DFH Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST1803DFH THERMAL DATA R thj- |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS 16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o C C March 1999 1/7 ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 6 |
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ST Microelectronics |
(ST10F273 / ST10F276) 16-bit MCU with MAC unit / up to 832 Kbytes Flash memory and up to 68 Kbytes RAM to allow software to detect if the device is an F276 or an F273. The missing memory in the ST10F273 can be seen as regular memory. If you wish make two assemblies of the same PCB with the ST10F276 and ST10F276, we advise to put a pull-up resistor on |
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STMicroelectronics |
Up to 3A step-down switching regulator • 3 A DC output current • Operating input voltage from 5.5 V to 48 V • 850 kHz internally fixed switching frequency • Internal soft-start • Power good open collector output • Current mode architecture • Embedded compensation network • Zero load curre |
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STMicroelectronics |
ST1803DHI C C January 2000 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO www.DataSheet4U.com Parameter Collector Cut-off |
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STMicroelectronics |
monolithic synchronous step-down regulator • Step-down current mode PWM regulator • Output voltage adjustable from 0.8 V • Input voltage from 2.5 V up to 18 V • 2% DC output voltage tolerance • Synchronous rectification • Inhibit function • Synchronizable switching frequency from 400 kHz up t |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epit |
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ST Microelectronics |
Smartcard MCU With 512 Bytes EEPROM INCLUDING EEPROM FLASH ERASE CONTACT ASSIGNMENT COMPATIBLE ISO 7816-2 ESD PROTECTION GREATER THAN 5000V 2 OPERATING CONFIGURATIONS – ISSUER – USER Wafer s s s s s s s BD.600/9809V1 This is Brief Data from STMicroelectronics. Details are subject |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 00 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h FE∗ VF BV EB0 Parameter Collector Cut-of |
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ST Microelectronics |
ST1803DH o o C C January 2000 1/6 www.DataSheet4U.com ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ |
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ST Microelectronics |
High voltage fast-switching NPN power transistor ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured u |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W oC oC 1/7 ST13007D THERMAL DATA Rthj-case Thermal Resist |
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STMicroelectronics |
Parallel port single termination network ■ ■ ■ ■ One device for parallel port termination Compliant with IEEE1284 standard EMI / RFI noise filtering Highly integrated solution in 28 pins QSOP package One single device provides the proper termination for 8 data lines, 1 strobe line, 4 contr |
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STMicroelectronics |
ST13007N 16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o C C March 1999 1/7 Free Datasheet http://www.datasheet4u.net/ ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junctio |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications 1 2 3 • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram C( |
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STMicroelectronics |
Overvoltage protected AC switch • Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology • High noise immunity against static dV/dt and IEC 61000-4-4 burst • High junction temperature: Tj = 150 °C • Needs no external overvoltage protection • VCL gives hea |
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STMicroelectronics |
16-BIT MCU ........................................................................................................ 37 6.1.1.1 -Enhanced Addressing Capabilities .................................................. 37 6.1.1.2 -Multiply-Accumulate Unit............. |
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ST Microelectronics |
16-BIT MCU ERRUPT – 8-CHANNEL PERIPHERAL EVENT CONTROLLER FOR SINGLE CYCLE, INTERRUPT DRIVEN DATA TRANSFER – 16-PRIORITY-LEVEL INTERRUPT SYSTEM WITH 56 SOURCES, SAMPLE-RATE DOWN TO 40ns TIMERS – TWO MULTI-FUNCTIONAL GENERAL PURPOSE TIMER UNITS WITH 5 TIMERS – T |
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ST Microelectronics |
16-BIT MCU USES – FIVE PROGRAMMABLE CHIP-SELECT SIGNALS – HOLD AND HOLD-ACKNOWLEDGE BUS ARBITRATION SUPPORT ON-CHIP BOOTSTRAP LOADER FAIL-SAFE PROTECTION – PROGRAMMABLE WATCHDOG TIMER – OSCILLATOR WATCHDOG INTERRUPT – 8-CHANNEL INTERRUPT-DRIVEN SINGLE-CYCLE DAT |
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