ST Microelectronics P45 fiche technique

No.	Partie #	Fabricant	Description
1	P45N10	ST Microelectronics	STP45N10
2	IRFP450	ST Microelectronics	N-Channel Power MOSFET dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area Value Uni t 500 V 500 V ± 20 V 14 A 8.7 A 56 A 190 W 1.5 W/oC 3.5 -65 to 150 150 (
3	P45NE06L	ST Microelectronics	STP45NE06L Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIG
4	STP45NE06L	ST Microelectronics	N-Channel POWER MOSFET Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIG
5	MP45DT02	ST Microelectronics	MEMS audio sensor omnidirectional digital microphone  Single supply voltage  Low power consumption  120 dBSPL acoustic overload point  Omnidirectional sensitivity  PDM single-bit output with option for stereo configuration  HLGA package (SMD-compliant) plastic or metal  ECOPACK®, RoHS, and “Gree
6	SP4510DG	SamHop Microelectronics	N-Channel Logic Level Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Volta
7	STP45N10	ST Microelectronics	N-Channel Power MOS Transistor pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP45N10FI 100 100 ± 25 45 32 180 150 1  -65 to 175 175 24 17 180 45 0.3 2000 Unit V V V
8	STP45NE06	ST Microelectronics	N-Channel POWER MOSFET Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI
9	STP45NF3LL	ST Microelectronics	N-Channel POWER MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th
10	IRFP451	ST Microelectronics	N-Channel MOSFET
11	IRFP452	ST Microelectronics	N-Channel MOSFET
12	STP45N10F7	STMicroelectronics	N-CHANNEL POWER MOSFET Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Description These devices utilize the 7t
13	STP45N10FI	ST Microelectronics	N-Channel Power MOS Transistor pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP45N10FI 100 100 ± 25 45 32 180 150 1  -65 to 175 175 24 17 180 45 0.3 2000 Unit V V V
14	STP45NE06FP	ST Microelectronics	N-Channel POWER MOSFET Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI
15	STP45NE06LFP	ST Microelectronics	N-Channel POWER MOSFET Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIG
16	STP45NF06	ST Microelectronics	N-Channel POWER MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 2 TO-220 I
17	STP45NF06L	ST Microelectronics	N-Channel POWER MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-220 I
18	STP45NF3LLFP	ST Microelectronics	N-Channel POWER MOSFET Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. Th
19	IRFP453	ST Microelectronics	N-Channel MOSFET
20	MP45DT01	ST Microelectronics	MEMS Audio Sensor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Piezoresistive pressure sensor Very low power consumption 300 -1100 mbar absolute pressure range 0.1 mbar resolution Embedded offset and span temperature compensation Embedded 16-bit ADC SPI and I2C interfaces Supply voltage: