ST Microelectronics MTP fiche technique

No.	Partie #	Fabricant	Description
1	SMTPB120	STMicroelectronics	TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT,
2	SMTPA100	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
3	SMTPB200	STMicroelectronics	TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT,
4	SMTPB270	STMicroelectronics	TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT,
5	SMTPB62	STMicroelectronics	TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT,
6	SMTPB68	STMicroelectronics	TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT,
7	MTP3055E	ST Microelectronics	N-CHANNEL MOSFET dth limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 1/8 MTP3055E THERMAL DATA R thj -case R thj -amb R t hc-s Tl Thermal Resistance Junction-case Max Thermal Res
8	SMTPA120	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
9	SMTPA220	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
10	SMTPA240	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
11	SMTPA200	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
12	SMTPA180	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
13	MTP3055A	STMicroelectronics	N-Channel MOSFET in current (pulsed) Gate current (pulsed) 'd * P.o." ■ ^"stg Ti Drain current (continuous) Total dissipation at Tc < 25°C Derating factor Storage temperature Max. operating junction temperature ■ See note on ISOWATT220 in this datasheet June 1988
14	MTP3055AFI	STMicroelectronics	N-Channel MOSFET in current (pulsed) Gate current (pulsed) 'd * P.o." ■ ^"stg Ti Drain current (continuous) Total dissipation at Tc < 25°C Derating factor Storage temperature Max. operating junction temperature ■ See note on ISOWATT220 in this datasheet June 1988
15	MTP15N05L	STMicroelectronics	N-Channel MOSFET rating junction temperature (e) Pulse width limited by safe operating area June 1988 MTP15N06L MTP15N06LFI MTP15N05L MTP15N05LFI 60 50 V 60 50 V ±15 V TO-220 ISOWATT220 15 10 A 9.5 6.3 A 40 40 A 75 30 W 0.6 0.24 W/oC - 65
16	SMTPA320	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
17	SMTPA270	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
18	SMTPA68	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
19	SMTPA62	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main
20	SMTPA130	STMicroelectronics	Trisil ■ Bidirectional crowbar protection ■ Voltage range from 62 V to 320 V ■ Low capacitance from 12 pF to 20 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 50 A (10/1000 µs) Main