| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
Complementary power Darlington transistors ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Da |
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ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 ° C Storage Temperature Max. Oper |
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ST Microelectronics |
Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low v |
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ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR A W o o C C January 2000 1/6 MJD50 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Sym |
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STMicroelectronics |
Complementary power Darlington transistor ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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ST Microelectronics |
Complementary power Darlington transistors ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Da |
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ST Microelectronics |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 ° C Storage Temperature Max. Oper |
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ST Microelectronics |
Complementary power Darlington transistors ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Da |
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STMicroelectronics |
Low voltage NPN power transistor ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C Application ■ General purpose linear and switching equipment Description The device is manufactured |
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STMicroelectronics |
Complementary power Darlington transistor ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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STMicroelectronics |
Complementary power Darlington transistors ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology |
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ST Microelectronics |
Complementary Silicon Power Transistors nce Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current |
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ST Microelectronics |
Complementary Silicon Power Transistors nce Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current |
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ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS s the values are intented negative. May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = |
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ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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ST Microelectronics |
Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low v |
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ST Microelectronics |
(MJD360T4-A / MJD361T4-A) Low Voltage Complementary Power Transistors ■ ■ ■ Those devices are qualified for automotive application Low collector emitter saturation voltage Surface-mounting TO-252 power package in tape and reel TAB 3 1 DPAK TO-252 Applications ■ General purpose switching and amplifier transistor Fig |
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ST Microelectronics |
(MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors ■ ■ ■ ■ . The devices are qualified for automotive application Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 3 1 TAB 2 Applications ■ ■ DPAK TO-252 Power |
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STMicroelectronics |
Automotive-grade low voltage PNP power transistor • AEC-Q101 qualified • Surface-mounting TO-252 power package in tape and reel • Complementary to the NPN type MJD31CT4-A Application • General purpose linear and switching equipment Description The device is manufactured in planar technology with a “ |
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STMicroelectronics |
Low voltage PNP power transistor • Surface-mounting TO-252 power package in tape and reel • Complementary to the NPN type MJD31CT4 Application • General purpose linear and switching equipment Description The device is manufactured in planar technology with a “base island” layout. Th |
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