ST Microelectronics M36 fiche technique

No.	Partie #	Fabricant	Description
1	M36W108AB	ST Microelectronics	8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product USING TWO CHIP ENABLE INPUTS LOW VCC DATA RETENTION: 2V 1/36 s March 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M36W108AT, M36W108AB Figure 2. LB
2	M36W0R6030T0	STMicroelectronics	64-Mbit Flash Memory and 8-Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configu
3	M36DR432D	ST Microelectronics	32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.9V to 2.1V s s s Figure 1. Packages – VPPF = 12V for Fast Program (optional) ACCESS TIME: 85,100ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36DR432C: 00A4h – B
4	M36W432BG	ST Microelectronics	32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product SUMMARY s MULTIPLE MEMORY PRODUCT – 32 Mbit (2Mb x 16), Boot Block, Flash Memory – 4 Mbit (256Kb x 16) SRAM Memory s SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s SRAM s 4 Mbit (256
5	M36L0T7050T0	STMicroelectronics	(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant) ■ E
6	M36DR432B	ST Microelectronics	32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory SUMMARY s SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V s s s Figure 1. Packages – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36DR432A: 00A0h –
7	M36W432	ST Microelectronics	32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product SUMMARY s SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s s s s s SRAM 4 Mbit (256K x 16 bit) ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABL
8	M36W432TZA	ST Microelectronics	32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product SUMMARY s SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s s s s s SRAM 4 Mbit (256K x 16 bit) ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABL
9	M36W832TE	ST Microelectronics	32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM / Multiple Memory Product SUMMARY s SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s s s Figure 1. Packages ACCESS TIMES: 70ns and 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Dev
10	M36L0T7050	ST Microelectronics	128Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32Mbit (2M x16) PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant) ■ E
11	M36L0R7050	ST Microelectronics	128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tole
12	M36L0R7050U1	ST Microelectronics	(M36L0R70x0x1) Flash memory – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) Mode – Automatic Temperature-compensated SelfRefresh ■ ■ ■ ■ June 2006 Rev 1 1/22 www.st.com 1 This is preliminary information on a new product now in development or undergoing evalu
13	M36W0R5020B0	STMicroelectronics	32 Mbit Flash Memory and 4 Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top F
14	M36L0R7050B0	STMicroelectronics	128 Mbit Flash Memory 32 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPPF = 9V for fast program (12V tole
15	M36D0R6040T0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top
16	M36D0R6040B0	STMicroelectronics	64-Mbit Flash Memory and 16 Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top
17	M36W0R6030B0	STMicroelectronics	64-Mbit Flash Memory and 8-Mbit SRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configu
18	M36W0R6040T0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De
19	M36W0R6040B0	STMicroelectronics	64-Mbit Flash Memory and 16-Mbit PSRAM SUMMARY ■ ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7V to 1.95V LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – De
20	M36L0T7050B0	STMicroelectronics	(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = 1.7 to 2V – VDDP = VDDQ = 2.7 to 3.3V – VPP = 9V for fast program (12V tolerant) ■ E