No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
2 Mb FLASH MEMORY |
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STMicroelectronics |
1 Mbit Flash Memory PP VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Supply Voltage Ground E G VSS AI00627B August 1998 1/20 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr M28F102 Figure 2A. L |
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STMicroelectronics |
64 Kbit (8K x 8) Parallel EEPROM |
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STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
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STMicroelectronics |
16 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
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ST Microelectronics |
M28F211 |
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STMicroelectronics |
64 Kbit (8Kb x8) Parallel EEPROM |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
32 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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ST Microelectronics |
4-Megabit Flash Memory Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage W E G VSS AI01130C 1/38 This is preliminary infor mationon a new pr |
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ST Microelectronics |
4-Megabit Flash Memory Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage W E G VSS AI01130C 1/38 This is preliminary infor mationon a new pr |
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ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory |
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STMicroelectronics |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME: – 10µs typical – Double Word Programming O |
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STMicroelectronics |
16K (2K x 8) PARALLEL EEPROM |
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STMicroelectronics |
1 Mb FLASH MEMORY |
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STMicroelectronics |
256 Kbit Flash Memory |
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STMicroelectronics |
64 Kbit (8Kb x8) Parallel EEPROM |
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STMicroelectronics |
16 Kbit (2K x 8) Parallel EEPROM |
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