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STMicroelectronics |
Very high voltage NPN power transistor ■ ■ ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation 3 Applications ■ High-definition and slim CRT TV and monitors 1 2 |
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ST Microelectronics |
High Voltage NPN Power Transistor ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE WHICH IS U.L COMPLIANT ISOWATT218FX 1 2 3 ■ ■ ■ |
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ST Microelectronics |
High Voltage NPN Power Transistor Figure 1. Package PRELIMINARY DATA ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS t(s) ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION duc Applications ro ■ HORIZONTAL D |
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STMicroelectronics |
HIGH VOLTAGE NPN POWER TRANSISTOR Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to Ext |
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STMicroelectronics |
HIGH VOLTAGE NPN POWER TRANSISTOR CES VCEO VEBO IC ICM IB IBM Ptot Vins Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) T |
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STMicroelectronics |
Very high voltage NPN power transistor ■ ■ ■ ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European directive TO-264 2 3 1 Descrip |
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