| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power |
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ST Microelectronics |
SGSF313PI |
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STMicroelectronics |
32-bit MCU+FPU • Core: Arm® 32-bit Cortex®-M4 CPU with FPU (72 MHz max.), single-cycle multiplication and HW division, DSP instruction • Memories – 64 Kbytes of Flash memory – 16 Kbytes of SRAM on data bus • CRC calculation unit • Power management – Supply: VDD = 1 |
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STMicroelectronics |
high-speed operational amplifier ■ OptimWatt device featuring ultra-low 2 mW consumption and low 400 μA quiescent current(a) Bandwidth: 120 MHz (gain = 2) Slew rate: 115 V/μs Specified on 1 kΩ Input noise: 7.5 nV/√ Hz Tested with 5 V power supply 300 krad MIL-STD-883 1019.7 ELDRS f |
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STMicroelectronics |
400W TVS • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up t |
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STMicroelectronics |
600W TVS • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power |
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STMicroelectronics |
32-bit MCU+FPU • Core: Arm® 32-bit Cortex®-M4 CPU with FPU (72 MHz max.), single-cycle multiplication and HW division, DSP instruction • Memories – 64 Kbytes of Flash memory – 16 Kbytes of SRAM on data bus • CRC calculation unit • Power management – Supply: VDD = 1 |
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STMicroelectronics |
high-speed operational amplifier • Ultra-low consumption: – 2 mW operating – 400 μA quiescent current • Bandwidth: 120 MHz (gain = 2) • Slew rate: 115 V/μs • Specified on 1 kΩ • Input noise: 7.5 nV/√ Hz • 5 V power supply • ELDRS free up to 300 krad • SEL immune at 110 MeV.cm2/mg • |
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ST Microelectronics |
High Voltage Fast Switching NPN Power Transistors |
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ST Microelectronics |
High Voltage Fast Switching NPN Power Transistors |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.148 Ω STW31N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 22 A Package D2PAK |
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