No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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Eutech Microelectronics |
Dual Power-Distribution Switch |
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STMicroelectronics |
Smart push-button on/off controller • Operating voltage 1.6 V to 5.5 V • Low standby current of 0.6 µA • Adjustable Smart Reset™ assertion delay time driven by external CSRD • Power-up duration determined primarily by push-button press • Debounced PB and SR inputs • PB and SR ESD inpu |
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STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
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STMicroelectronics |
Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE |
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ST Microelectronics |
CURRENT LIMITED POWER DISTRIBUTION SWITCHES preventing the OC_N pin to be asserted during hot-insertion or short spikes of overcurrent conditions. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a therm |
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STMicroelectronics |
Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
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ST Microelectronics |
CURRENT LIMITED POWER DISTRIBUTION SWITCHES 42BDR Temperature Range -40 to 85 °C -40 to 85 °C Package switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short is present, |
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Summit Microelectronics |
Distributed Power Hot-Swap Controller • Supply Range ±20VDC to >±500VDC • Versatile Card Insertion Detection Supports Both – Multi-length Pin Systems – Card Injector Switch Sensing • Control Up to Four Loads or a Primary Load and 3 DC/DC Converters • Highly Programmable Host Voltage Moni |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE -heats ink With Conductive Grease Applied Max Max 0.5 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V B |
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STMicroelectronics |
NPN TRANSISTOR POWER MODULE |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR 70 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current Em |
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STMicroelectronics |
FAST-SWITCHING POWER TRANSISTOR |
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ST Microelectronics |
High Voltage Power Switch |
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ST Microelectronics |
High Voltage Power Switch |
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ST Microelectronics |
High Voltage Power Switch |
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