ST Microelectronics BD7 fiche technique

No.	Partie #	Fabricant	Description
1	BD709	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS d current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o
2	BD705	ST Microelectronics	NPN Transistor
3	BD708	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS 0 BD711 BD712 100 100 100 Un it V V V V A A A W oC oC 1/6 BD707/708/709/711/712 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-case Thermal Resistance Junction-ambient Max Max 1.67 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase
4	BD707	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS 0 BD711 BD712 100 100 100 Un it V V V V A A A W oC oC 1/6 BD707/708/709/711/712 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-case Thermal Resistance Junction-ambient Max Max 1.67 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase
5	BD712	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS d current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o
6	BD710	ST Microelectronics	PNP Transistor
7	BD711	STMicroelectronics	COMPLEMENTARY SILICON POWER TRANSISTORS d current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o
8	BD706	ST Microelectronics	PNP Transistor
9	STG60H65FBD7	STMicroelectronics	IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A • Safe paralleling • Tight parameter distribution Applications • Solar • We