| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
High power density 600V Half bridge driver • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS) – IDS(MAX) = 6.5 A (LS) + 4 A (HS) • Reverse current |
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ST Microelectronics |
THYRISTORS AND TRIACS / AN IMPORTANT PARAMETER |
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ST Microelectronics |
LATCHING CURRENT |
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