| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
ST Microelectronics |
STB42N65M5 Type STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 VDSS @ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.079 Ω < 0.079 Ω < 0.079 Ω < 0.079 Ω < 0.079 Ω ID 33 A 33 A (1) 33 A 33 A 33 A 3 12 1 3 2 3 1 1 3 2 TO-220FP D²PAK TO-220 1. L |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF Figure 1. Internal schematic diagram ' • Extremely low gate charge • Excellent output capacitance (COSS) profile • Ve |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener |
|
|
|
|
ST Microelectronics |
N-Channel Power MOSFET TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent sw |
|
|
|
|
ST Microelectronics |
N-Channel Power MOSFET TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent sw |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener |
|
|
|
|
ST Microelectronics |
N-Channel Power MOSFET Order codes VDS @ TJmax RDS(on) max. STB42N65M5 STF42N65M5 STI42N65M5 710 V 79 mΩ STP42N65M5 STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications |
|
|
|
|
ST Microelectronics |
N-Channel Power MOSFET TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent sw |
|
|
|
|
STMicroelectronics |
N-Channel Power MOSFET TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order codes VDS RDS(on) max. STB42N65M5 STF42N65M5 STP42N65M5 650 V 79 mΩ STW42N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent sw |
|
|
|
|
ST Microelectronics |
N-Channel Power MOSFET Order code STL42N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.079 Ω ID 34 A(1) 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applicat |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF Figure 1. Internal schematic diagram ' • Extremely low gate charge • Excellent output capacitance (COSS) profile • Ve |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener |
|