| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory 3 DQ4 DQ5 DQ6 AI02755 1 32 8 9 M29W512B 25 24 16 17 AI02976 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 Table 1. Signal Names A0-A15 DQ0-DQ7 E G W VCC VSS NC Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enab |
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STMicroelectronics |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory put Enable Write Enable Supply Voltage Ground PLCC32 (K) TSOP32 (N) 8 x 20mm TSOP32 (NZ) 8 x 14mm Figure 1. Logic Diagram VCC 19 A0-A18 8 DQ0-DQ7 W E G M29W040 VSS AI02074 November 1999 This is information on a product still in productionb |
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STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory 20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withou |
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ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W004T and M29W004B devices have an array of 11 blocks, one Boot Block of 16K Bytes, two Parameter Blocks of 8K Bytes, one Main Block of 32K Bytes and seven Main Blocks o |
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ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory RASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160BT: 22C4h – Bottom Device Code M29W160BB: 2249h s s VSS AI00981 Note: RB not available on SO44 p |
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ST Microelectronics |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main |
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ST Microelectronics |
M29W320DB SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME – 10µs per Byte/Word typical s 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Pa |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W008T and M29W008B devices have an array of 19 blocks, one Boot Block of 16 Kbytes, two Parameter Blocks of 8 Kbytes, one Main Block of 32 Kbytes and fifteen Main Blocks |
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ST Microelectronics |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory put Enable Write Enable Supply Voltage Ground PLCC32 (K) TSOP32 (N) 8 x 20mm TSOP32 (NZ) 8 x 14mm Figure 1. Logic Diagram VCC 19 A0-A18 8 DQ0-DQ7 W E G M29W040 VSS AI02074 November 1999 This is information on a product still in productionb |
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ST Microelectronics |
32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bott |
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ST Microelectronics |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W800AT and M29W800AB devices have an array of 19 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KByt |
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ST Microelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Embedded Byte Program Algorithm – Status Register bit |
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ST Microelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Embedded Byte Program Algorithm – Status Register bit |
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STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory 20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withou |
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ST Microelectronics |
2 Mbit 256Kb x8 / Boot Block Low Voltage Single Supply Flash Memory Code: 20h – Top Device Code M29W002BT: 40h – Bottom Device Code M29W002BB: C2h s s VSS AI02955 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. |
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ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh s s VSS AI02954 March 2000 1/20 M29W004BT, M29W004BB Figure 2. TSOP Connections Table 1. Signal Names A0-A18 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Wri |
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ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory Device Code M29W004BT: EAh – Bottom Device Code M29W004BB: EBh s s VSS AI02954 March 2000 1/20 M29W004BT, M29W004BB Figure 2. TSOP Connections Table 1. Signal Names A0-A18 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Wri |
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ST Microelectronics |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W004T and M29W004B devices have an array of 11 blocks, one Boot Block of 16K Bytes, two Parameter Blocks of 8K Bytes, one Main Block of 32K Bytes and seven Main Blocks o |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W008AT and M29W008AB devices have an array of 19 blocks, one Boot Block of 16 Kbytes, two Parameter Blocks of 8 Kbytes, one Main Block of 32 Kbytes and fifteen Main Bloc |
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ST Microelectronics |
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory asymmetrically blocked architecture providing system memory integration. Both M29W008AT and M29W008AB devices have an array of 19 blocks, one Boot Block of 16 Kbytes, two Parameter Blocks of 8 Kbytes, one Main Block of 32 Kbytes and fifteen Main Bloc |
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