| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
2 Mb FLASH MEMORY |
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STMicroelectronics |
1 Mbit Flash Memory PP VCC VSS Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Supply Voltage Ground E G VSS AI00627B August 1998 1/20 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr M28F102 Figure 2A. L |
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STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
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Huajing Microelectronics |
Silicon NPN Transistor |
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STMicroelectronics |
256K(32K x8 / Chip Erase)FLASH MEMORY |
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STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
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ST Microelectronics |
M28F211 |
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ST Microelectronics |
4-Megabit Flash Memory Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage W E G VSS AI01130C 1/38 This is preliminary infor mationon a new pr |
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ST Microelectronics |
4-Megabit Flash Memory Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage W E G VSS AI01130C 1/38 This is preliminary infor mationon a new pr |
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ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory |
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STMicroelectronics |
1 Mb FLASH MEMORY |
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STMicroelectronics |
256 Kbit Flash Memory |
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ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory |
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ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory |
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ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory |
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ST Microelectronics |
Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA – Synchronous |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
HIGH SPEED 16K x 8 CMOS EPROM • Very Fast Access Time — 35 ns • Standard EPROM Pinout • DIP and Surface Mount Packaging Available • Low Power Consumption • EPI Processing — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasabl |
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Huajing Microelectronics |
Silicon NPN Transistor |
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ST Microelectronics |
Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA – Synchronous |
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