SIEMENS BA5 fiche technique

No.	Partie #	Fabricant	Description
1	BA586	Siemens Semiconductor Group	Silicon PIN Diode – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz
2	BA582	Siemens Semiconductor Group	Silicon RF Switching Diode f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2
3	BA585	Siemens Semiconductor Group	Silicon PIN Diode 1.1 50 – – Unit V nA pF 0.28 0.23 0.6 0.4 Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2
4	BA597	Siemens Semiconductor Group	Silicon PIN Diode mA Semiconductor Group 2 BA 597 Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz Forward resistance rt = (IF), f = 100 MHz 3rd Harmonic intercept point vs forward current f = 100 MHz Semiconductor Group 3
5	BA592	Siemens Semiconductor Group	Silicon RF Switching Diode de capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2
6	BA597	SIEMENS	Silicon PIN Diode
7	BA595	Siemens Semiconductor Group	Silicon PIN Diode Current-controlled RF resistor for RF attenuators q Frequency range 1 MHz … 2 GHz q Especially useful as antenna switch in TV-sat tuners q Type BA 595 Marking white R Ordering Code (tape and reel) Q62702-A952 Pin Configuration Package1) SOD-323
8	BA596	Siemens Semiconductor Group	Silicon PIN Diode – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz
9	TBA530	Siemens	RGB Matrix PreAmplifier