No. | Partie # | Fabricant | Description | Fiche Technique |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor O VCE(sat) VBE(sat) Min. 10 600 400 9 Max. 70 100 100 1 1.2 Unit V V V nA µA V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/03/20 |
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SEMTECH |
NPN Silicon Power Transistors V V A W W OC OC Symbol Min. hFE hFE ICBO 10 8 - IEBO - V(BR)CEO 400 VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob - - 4 - Typ. - - - - - 65 Max. 60 40 1 1 - Unit mA mA V 0.5 V 0.6 V 1V 1.2 V 1.6 V - MHz - pF SEMTECH ELECTRONICS LT |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz Fall |
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