| No. | Partie # | Fabricant | Description | Fiche Technique |
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SEMTECH |
NPN Transistor IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO M |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor IC=2A Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=6V Collector-Emitter Breakdown Voltage at IC=10mA Emitter-Base Breakdown Voltage at IE=1mA Collector Output Capacitance at VCB=10V, f=1.0MHz Collector to Emitter Saturation Volta |
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SEMTECH |
NPN Transistor IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO M |
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