| No. | Partie # | Fabricant | Description | Fiche Technique |
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SEMTECH |
SILICON EPITAXIAL PLANAR DIODES Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = |
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SEMTECH |
LOW LEAKAGE DOUBLE DIODE • Very low leakage current • Medium speed switching times • Series pair configuration Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Repetitive Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Single Diode Double Diode |
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SEMTECH |
SILICON EPITAXIAL PLANAR DIODES Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = |
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SEMTECH |
Silicon Epitaxial Planar Diodes |
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SEMTECH |
Silicon Epitaxial Planar Switching Diode |
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SEMTECH |
SURFACE MOUNT FAST SWITCHING DIODE • Fast Switching Speed • Surface Mount Package Ideally Suited for automatic Insertion • For General Purpose Switching Applications • High Conductance PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 WO Top View Marking Code: WO Simplified outline SOD |
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SEMTECH |
SURFACE MOUNT FAST SWITCHING DIODE • Fast Switching Speed • Surface Mount Package Ideally Suited for automatic Insertion • For General Purpose Switching Applications • High Conductance PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 WO Top View Marking Code: WO Simplified outline SOD |
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SEMTECH |
SILICON PLANAR DUAL SWITCHING DIODE V nA µA µA µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 BAV74 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech |
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SEMTECH |
LOW LEAKAGE DOUBLE DIODE • Very low leakage current • Medium speed switching times 3 12 Marking Code: JY Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Repetitive Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Single Diode Double Diode Re |
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SEMTECH |
SILICON EPITAXIAL PLANAR DIODES Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = |
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SEMTECH |
SURFACE MOUNT FAST SWITCHING DIODE • Fast Switching Speed • Surface Mount Package Ideally Suited for automatic Insertion • For General Purpose Switching Applications • High Conductance PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 WO Top View Marking Code: WO Simplified outline SOD |
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SEMTECH |
Silicon Epitaxial Planar Diodes |
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SEMTECH |
Silicon Epitaxial Planar Diodes at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω Symbol V(BR)R VF IR Ctot trr Min. 250 - - - Max. - 1 1.25 100 100 5 50 Unit V V nA µA pF ns SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 BAV23 / SE / CC / CA SEMTECH ELECTRONICS LTD. ® D |
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SEMTECH |
Silicon Epitaxial Planar Diodes |
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