| No. | Partie # | Fabricant | Description | Fiche Technique |
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SEMTECH |
PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
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SEMTECH |
NPN Silicon Transistor at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, |
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SEMTECH |
NPN Silicon Transistor ctor Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figu |
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SEMTECH |
SILICON PLANAR ZENER DIODES ) (Ω) at lZT lZT (mA) IR (µA) Max. VR (V) 2V0BS 1.88 2.2 2V0BSA 1.88 2.1 5 100 5 120 0.5 2V0BSB 2.02 2.2 2V2BS 2.12 2.41 2V2BSA 2.12 2.3 5 100 5 120 0.7 2V2BSB 2.22 2.41 2V4BS 2.33 2.63 2V4BSA 2.33 2.52 5 100 5 120 |
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Semtech |
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier • • • • • • • • • • 100 mA bias current and 90 mA modulation current output drive capability On-chip Digital Diagnostic Monitoring (DDMI) Automatic Mean Power and Automatic Extinction Ratio control Fast burst-mode loop settling time Current DAC outpu |
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SEMTECH |
NPN Silicon Transistor IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resista |
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SEMTECH |
NPN Silicon Transistor |
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SEMTECH |
NPN Silicon Transistor ctor Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=50mA, IB=5mA Base Emitter Voltage at IC=10mA, VCE=5V Gain Bandwidth Product at IC=-2mA, VCE=10V Noise Figu |
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Semtech |
SCR node. GSP FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) ® Dated : 06/12/2003 MCR100-3 … MCR100-8 CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.) Characteristic Peak Forward or Reverse B |
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SEMTECH |
NPN Transistor IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=800mA, IB=80mA Base Saturation Voltage at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage at |
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Semtech Corporation |
Low Power Long Range Transceiver The SX1276/77/78/79 transceivers feature the LoRa® long range modem that provides ultra-long range spread spectrum communication and high interference immunity whilst minimising current consumption. Using Semtech’s patented LoRa modulation technique |
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SEMTECH |
NPN Transistor A, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO Min. 100 |
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SEMTECH |
Surface Mount General Purpose Silicon Rectifiers Current at Rated DC Blocking Voltage Ta = 25℃ Ta = 125℃ IR Typical Junction Capacitance 1) Cj Typical Thermal Resistance 2) RθJA 1.1 V 5 50 µA 9 pF 120 ℃/W Operating and Storage Temperature Range Tj, Tstg - 55 to + 150 ℃ 1) Measur |
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SEMTECH |
NPN Transistor IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO M |
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Semtech Corporation |
Ultra Low Capacitance TVS Arrays ESD protection for high-speed data lines to IEC 61000-4-2 (ESD) ±1 7kV (air), ±1 2kV (cont act) IEC 61000-4-5 (Lightning) 5A (8/20 μs) IEC 61000-4-4 (EFT) 40A (5/50ns) Package design optimized for high speed lines Flow-Through design Protects two o |
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SEMTECH ELECTRONICS |
PNP Silicon Transistor A Noise Figure at -VCE=6V, -IC=0.1mA, RG=10kΩ, f=10Hz Output Capacitance at -VCB=10V, f=1MHz Base Emitter Voltage at -VCE=6V,-IC=2mA Collector Cutoff Current at -VCB=120V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=10mA, -IB |
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SEMTECH |
3-terminal 1A positive voltage regulator • Output Current up to 1 A • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection Absolute Maximum Ratings (Ta = 25 OC) Parameter Input Voltage Thermal Resistance Junction-Cases Thermal Resistance |
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SEMTECH |
PNP Transistor ˙ High frequency current gain ˙ High speed switching ˙ Small output capacitance ˙ Low collector saturation voltage ˙ Complementary to ST 2SC3731 NPN transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 OC) Collec |
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SemtechCorporation |
SILICONPLANARZENERDIODE |
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SEMTECH |
Single-Phase Glass Passivated Silicon Bridge Rectifier • Glass passivated chip junction • Low forward voltage drop • Low leakage current • Ideal for printed circuit board Mechanical Data • Case: Molded plastic, MBF • Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D • Mounting positi |
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