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SEMIPOWER |
MOSFET TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement m |
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SEMIPOWER |
MOSFET TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode |
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SEMIPOWER |
N-Channel MOSFET Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA High Switching Speed Application:LED,Charger N-channel Depletion mode SOT23 MOSFET SOT23 3 1 2 BVDSS : 600V ID : 0.02A RDS(ON) : 540Ω 3 General Description 1. Source 2. Gate 3. Drain The SW601Q is an |
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SEMIPOWER |
MOSFET TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology |
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SEMIPOWER |
N-channel TO-262 MOSFET ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 40nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 BVDSS : 900V ID : 6.0A RDS(ON) : 2.3ohm 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is p |
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SEMIPOWER |
MOSFET ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 12 3 1 2 3 BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm 2 1. Gate 2. Drain 3. Source General Description This p |
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