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Semikron |
IGBT POWER MODULE VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 |
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Semikron |
IGBT POWER MODULE & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & 'LRGH 5H.WLILHU 7HPSHUDWXUH 6HQVRU , ?0DUNHWLQ?)5$0('$7?0,1,B6.?QHEWIP & 6KXQWV 6.LL3 1(% , 7 0H.KDQL.DO 'DWD |
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Semikron |
IGBT POWER MODULE |
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Semikron |
IGBT POWER MODULE 9) 9(& 972 U7 ,550 4UU (RII 5WKMK 9) 5WKMK 576 5.V G. 5.V D. 0 &DVH ,) 7M 7M &KRSSHU $ 7M & & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & PLQ W\S PD[ 8QLWV 9 QV QV Q |
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Semikron |
IGBT POWER MODULE VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 |
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Semikron |
IGBT POWER MODULE Esat IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = |
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Semikron |
IGBT POWER MODULE 9) 9(& 972 U7 ,550 4UU (RII 5WKMK 9) 5WKMK 576 5.V G. 5.V D. 0 &DVH ,) 7M 7M &KRSSHU $ 7M & & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & PLQ W\S PD[ 8QLWV 9 QV QV Q |
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SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter nverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR = – 600 V IRRM diF/dt = – 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode Temperatu |
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SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter nverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR = – 600 V IRRM diF/dt = – 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode Temperatu |
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Semikron |
IGBT POWER MODULE |
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Semikron |
IGBT POWER MODULE & & ,) $ 95 ± 9 GL)GW ± $µV 9*( 9 7M & SHU GLRGH ,) $ SHU GLRGH 7 7M & 'LRGH 5H.WLILHU 7HPSHUDWXUH 6HQVRU , ?0DUNHWLQ?)5$0('$7?0,1,B6.?QHEWIP & 6KXQWV 6.LL3 1(% , 7 0H.KDQL.DO 'DWD |
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