| No. | Partie # | Fabricant | Description | Fiche Technique |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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CITC |
MOS Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSF20S45CTG-A. • Lead free in compliance with EU RoHS. ■ Mechanical data • Epoxy : UL94-V0 rated flame ret |
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Shindengen |
Schottky Rectifiers (SBD) (40V 20A) •œTj150 •Ž OUTLINE DIMENSIONS Case : FTO-220 Unit : mm •œ PRRSM avalanche guaranteed •œ Fully Isolated Molding •œ High current capacity with Small Package •œ Dielectric strength 2kV guaranteed APPLICATION •œ Switching power supply •œ DC/DC converte |
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Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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INCHANGE |
Schottky Barrier Rectifier ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high frequency miniature switched mode power supplies such as ad |
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SCHOTT |
SEFUSE Thermal Links |
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SCHOTT |
SEFUSE Thermal Links |
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CITC |
MOS Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSF20L150CTG-A. • Lead free in compliance with EU RoHS. ■ Mechanical data • Epoxy : UL94-V0 rated flame ret |
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Shindengen Electric |
Schottky Rectifiers mA Typ 260 pF Max 2.0 /W Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd SF20JC10 100 Forward Voltage Pulse measurement per diode 50 20 [A] 10 Forward Current IF 5 Tc=150°C [MAX] Tc=150°C [TYP] Tc= 25°C [MAX] Tc= 25°C [TYP] 2 1 0.5 0.2 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Dual High-Voltage Trench Schottky Rectifier - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Hal |
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Taiwan Semiconductor |
Trench Schottky Rectifier - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halog |
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