| No. | Partie # | Fabricant | Description | Fiche Technique |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------6.5 mΩ max. (VGS = 10 V, ID = 34.0 A) Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A) Qg------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------4.0 mΩ max. (VGS = 10 V, ID = 47.2 A) Qg------16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57.0 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.0 mΩ max. (VGS = 10 V, ID = 68.0 A) Qg------25.8 nC (VGS = 4.5 V, VDS = 15 V, ID = 78.0 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 20 A RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A) Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A) Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) L |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) -------- 18.1 mΩ max. (VGS = 10 V, ID = 20.4 A) Qg------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) L |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 75 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 25.5 mΩ max. (VGS = 10 V, ID = 12.4 A) Qg------- 7.1 nC (VGS = 4.5 V, VDS = 38 V, ID = 15.8 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 75 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 14.5 mΩ max. (VGS = 10 V, ID = 18.9 A) Qg------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 75 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------9.5 mΩ max. (VGS = 10 V, ID = 27.2 A) Qg------ 25.0nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 22 A RDS(ON) -------- 21.7 mΩ max. (VGS = 10 V, ID = 12.5 A) Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A) Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------9.5 mΩ max. (VGS = 10 V, ID = 23.6 A) Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A) Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------5.4 mΩ max. (VGS = 10 V, ID = 35.4 A) Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 40 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 51.0 A) Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.5 mΩ max. (VGS = 10 V, ID = 25.0 A) Qg------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) |
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SANKEN |
N Channel Trench Power MOSFET V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------6.5 mΩ max. (VGS = 10 V, ID = 31.0 A) Qg------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) |
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