SAMSUNG ELECTRONICS K7A fiche technique

No.	Partie #	Fabricant	Description	Fiche Technique
1	K7A161830B	SAMSUNG ELECTRONICS	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Wr
2	K7A163630B	SAMSUNG ELECTRONICS	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Wr