| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
600V short-circuit rugged IGBT • IPM 20 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Short-circuit rugged IGBTs • 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors • Undervoltage |
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ADV |
3 Quadrants Triacs ◆ Repetitive Peak Off-State Voltage: 600Vand800V ◆ R.M.S On-State Current ( IT(RMS)= 20A ) ◆ High Commutation dv/dt ◆ These Devices are Pb-Free and are RoHS Compliant ADS20C60/80 2.T2 3.Gate 1.T1 2 1 23 TO-220 Absolute Maximum Ratings Symbol |
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ADV |
3 Quadrants Triacs ◆ Repetitive Peak Off-State Voltage: 600Vand800V ◆ R.M.S On-State Current ( IT(RMS)= 20A ) ◆ High Commutation dv/dt ◆ These Devices are Pb-Free and are RoHS Compliant 1 23 TO-220F Absolute Maximum Ratings Symbol VDRM VRRM IT(RMS) ITSM I2t dI/dt IG |
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ADV |
3 Quadrants Triacs ◆ Repetitive Peak Off-State Voltage: 600Vand800V ◆ R.M.S On-State Current ( IT(RMS)= 20A ) ◆ High Commutation dv/dt ◆ These Devices are Pb-Free and are RoHS Compliant ◆ Isolated heatsink mounted , Isolation Voltage ( VISO = 2500V AC ) 123 TO-220 Iso |
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Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current |
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Compact Technology |
SCHOTTKY BARRIER RECTIFIERS Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protecti |
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ADV |
3 Quadrants Triacs ◆ Repetitive Peak Off-State Voltage: 600Vand800V ◆ R.M.S On-State Current ( IT(RMS)= 20A ) ◆ High Commutation dv/dt ◆ These Devices are Pb-Free and are RoHS Compliant 2 12 3 TO-263-2 Absolute Maximum Ratings Symbol VDRM VRRM IT(RMS) ITSM I2t dI/dt |
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Mospec Semiconductor |
Schottky Barrier Rectifiers epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching n |
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STMicroelectronics |
IGBT • IPM 20 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Short-circuit rugged IGBTs • 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down / pull-up resistors • Undervoltage |
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