| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
DC-DC Converter (20V/ 3.0A) 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TS |
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Rohm |
MOSFET 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6) . zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) TSMT6 SOT-457T 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2 |
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Rohm |
Nch 45V 2A Power MOSFET 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continu |
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Rohm |
2.5V Drive Nch MOS FET 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6) . zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 |
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Rohm |
DC-DC Converter (20V/ 2.5A) 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TQ |
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Rohm |
DC-DC Converter (20V/ 3.0A) 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TS |
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Rohm |
DC-DC Converter (20V/ 3.5A) 1) Low On-resistance.(80mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TL |
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Rohm |
2.5V Drive Nch MOS FET 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS |
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Rohm |
MOSFET 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). zApplications Switching zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark |
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ROHM |
Nch 30V 4.5A Small Signal MOSFET |
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