| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Rohm |
Fast recovery Diodes 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard package TO-220FN, CPD 5.6 2.3 2.3 0.55 1.2 (1) Anode (2) Cathode (3) Anode (1) (2) (3) TO-220FN 10.0 φ3.2 4.5 15.0 12.0 8.0 5.0 1.2 1.3 0.8 (1) Anode ( |
|
|
|
|
Rohm |
Fast Recovery Diode 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss zConstruction Silicon epitaxial planer 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zTaping specifications(Unit : mm) Limits Symbol 200 VRM 200 VR 5 I |
|
|
|
|
Rohm |
Super Fast Recovery Diode 1)Power mold type.（CPD） 2)High switching speed 3)Low Reverse current (1) CPD Structure Construction Silicon epitaxial planar Production month (1) Taping dimensions（Unit : mm） 3.0 2.0 6.0 (2) (3) Absolute maximum ratings（Tc=25 C） Pa |
|
|
|
|
Rohm |
Fast Recovery Diodes EHigh-reliability TO-220 package product. Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Forward current IF Average rectified forward current IO(A) Forward |
|
|
|
|
Rohm |
Super Fast Recovery Diode 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Open Anode Absolute Maximum Rat |
|
|
|
|
Rohm |
Super Fast Recovery Diode 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 1.6 1.6 TO-252 2.3 2.3 Structure Cathode φ1 |
|
|
|
|
Rohm |
Super Fast Recovery Diode 1) Low switching loss 2) Low forward voltage 3) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathod |
|
|
|
|
Rohm |
Super Fast Recovery Diode 1) Low switching loss 2) Low forward voltage 3) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathod |
|
|
|
|
ROHM |
Super Fast Recovery Diode 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252GE JEITA : - TO-252 2.3 2.3 Structure Cathode Taping specifications (Unit : mm) Open Anode Absolute maximum ratings (at Ta= 25°C unless o |
|