| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Rohm |
Schottky Barrier Diode High reliability Small power mold type Super low VF ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Quantity |
|
|
|
|
Rohm |
Schottky Barrier Diode 1) Small power mold type (PMDU) 2) High reliability 3) Super low IR 0.9±0.1 3.5±0.2 0.12 2.6±0.1 PMDU lStructure 0.8±0.1 Cathode ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date lConstruction Silicon epitaxial planar type lTaping Dimensions ( |
|
|
|
|
ROHM |
Schottky barrier diode 1) Small power mold type. (PMDS) Dimensions (Unit : mm) 2.6±0.2 for Land size figure (Unit : mm) 2.0 2) Low IR. 3) High reliability d Construction mendigens Silicon epitaxial planer 34 ①② 1.5 ±0.2 0.1±0.02 0.1 2.0±0.2 PMDS Structure RO |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low VF lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) JEDEC : - |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small power mold type (TUMD2M) 2) High reliability 3) Low VF 2.0±0.1 2.5±0.2 (2) ROHM : TUMD2M Manufacture date and factory 0.4±0.10 0～0.1 TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) ROHM : TUM |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small mold type (TUMD2M) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17 +0.10 -0.05 1.0±0.10 0.60 +0.20 -0.10 lLand Size Figure (Unit : mm) 1.1 (1) 0.8 0.5 2.0 1.5±0.10 2.0±0.1 2.5±0.2 (2) ROHM : TUM |
|
|
|
|
ROHM |
Schottky Barrier Diode High reliability Small mold type Super low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Basic Ordering |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Super low IR lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode l |
|
|
|
|
ROHM |
Schottky Barrier Diode 1) Small power mold type (PMDS) 2) High reliability 3) Super low IR Construction Silicon epitaxial planar type 12 0.1±0.02 1.5±0.2 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 PMDS |
|
|
|
|
Rohm |
Schottky barrier diode 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability Construction Silicon epitaxial planer 2.6±0.2 34 ①② 1.5 ±0.2 0.1±0.02 0.1 2.0±0.2 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Land size figure (Unit : mm) 2.0 PMDS Structure ROHM : PMDS |
|
|
|
|
Rohm |
Schottky barrier diode 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. 2.6±0.1 3.5±0.2 0～0.1 0.9±0.1 0.8±0.1 PMDU 0.15±0.03 0.8±0.1 0.6 zStructure 0.45 0.6 zConstruction Silicon epitaxial planar ROHM : PMDU JEDEC : SOD-123 ① Manufacture Date z T |
|
|
|
|
Rohm |
Schottky barrier diode 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol S |
|
|
|
|
Rohm |
Schottky barrier diode 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 29±1 3.0±0.2 ① ② 8 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 A BLUE E |
|
|
|
|
Rohm |
Schottky barrier diode 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. φ0.6±0.1 ① ② 2 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) BROWN H2 B |
|
|
|
|
Rohm |
Schottky barrier diode 1)Small power mold type.（PMDU） 2)Low VF 3)High reliability Construction Silicon epitaxial planar ① 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 PMDU Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.2 |
|
|
|
|
Rohm |
CMOS Type series regulator ces shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or rela |
|
|
|
|
Rohm |
Schottky Barrier Diode 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage Construction Silicon epitaxial planer PMDS Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak reverse vo |
|
|
|
|
Rohm |
Schottky Barrier Diode 1)Small mold type (TUMD2) 2)Low VF www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2.0 1/3 2010.02 - Rev.A RB162VA-20 Electrical characteristics curves 10 FORWARD CURRENT : IF(A) Ta=125 C 1 Ta=75 C 0.1 REVERSE CURRENT : IR(A) 10000 10 |
|
|
|
|
Rohm |
Schottky Barrier Diode 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar ① PMDU 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 |
|