Rohm R60 fiche technique

No.	Partie #	Fabricant	Description
1	R6015ANX	Rohm	Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing
2	R6015KNX	ROHM	Power MOSFET
3	R6015ANZ	Rohm	Nch 600V 15A Power MOSFET 1) Low on-resistance. e 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. t 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant le lApplication Switching Power Supply o lAbs
4	R6076ENZ1	ROHM	Nch 600V 76A Power MOSFET 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating ;
5	R6020PNJ	ROHM	Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant 6) AEC-Q101 Qualified lInner circuit lPackaging specifications Packing Embossed Tape R
6	R6004JND3	ROHM	Power MOSFET
7	R6024KNZ	ROHM	Power MOSFET 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-3PF 　　　　　　　 lInner circuit 　 lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Ta
8	R6024ENJ	ROHM	Power MOSFET 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE 6) Pb-free lead plating ;
9	R6030ENZ	ROHM	Power MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Tube
10	R6004END	Rohm	Power MOSFET 58W 　　　　　　　 lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specif
11	R6004CND	ROHM	N-Channel MOSFET 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 (1) Gate (2) Drain (3) Source 0.75 0.9 2.3 (1) (2
12	R6008MND3	ROHM	MOSFET 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Pa
13	R6076MNZ1	ROHM	MOSFET 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Pa
14	R6010MND3	ROHM	MOSFET 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Pb-free plating ; RoHS compliant lInner circuit lPackaging specifications Pa
15	R6010ANX	Rohm	Drive Nch MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 (1) Gate (2) Drain (3) Source 2.54 (1) (2) (3)
16	R6012ANJ	Rohm	Drive Nch MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 7.25 13.1 3.0 1.0 1.24 9.0 0.78 5.08 2.7 (1) Gate (2) Drain (3) Source (1) (2) (3
17	R6012ANX	Rohm	Drive Nch MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3
18	R6012FNX	Rohm	Drive Nch MOSFET 1) Fast reverse recovery time (trr) 15.0 12.0 8.0 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Application Switching  Inner circuit Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 www.Data
19	R6018ANJ	Rohm	Drive Nch MOSFET 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) (1) Gate (2) Drain (3) Source 5.08 (1) (2) 2.7  Application Switching  Packaging specific
20	R6018ANX	Rohm	Drive Nch MOSFET 1) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ;