| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
2SD2144 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
2SD2118 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 |
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Rohm |
High-current Gain Medium Power Transistor 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
High-current Gain Medium Power Transistor 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96 |
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Rohm |
Transistor 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units |
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Rohm |
High-gain Amplifier Transistor 1)Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2)High input impedance. 2SD2142K SOT-346 lInner circuit Datasheet lApplication High gain amplifier lPackaging specifications Part No. P |
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Rohm |
Medium Power Transistor 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. Absolute maximum ratings (Ta=25C) Parameter Collector-base |
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Rohm |
Power Transistor 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. !External dimensions (Units : mm) 2SD2195 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 |
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Rohm |
2SD2159 |
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Rohm |
Transistor 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 |
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Rohm |
High gain amplifier transistor 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base (2) Collector (3) Emitt |
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ROHM |
Power Transistor 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) zExternal dimensions (Unit : mm) 3.0 1.5 1.5 |
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Rohm |
2SD2143 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 |
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Rohm |
NPN SIlicon Transistor |
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Rohm |
High-current Gain Medium Power Transistor 1)High DC current gain 2)High emitter-base voltage. VEBO=12V 3)Low VCE(sat). VCE(sat)=180mV(Typ.) (IC/IB=500mA/20mA) lOutline SMT3 SOT-346 SC-59 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, MUTING, |
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Rohm |
Transistor 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limi |
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Rohm |
Medium Power Transistor 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitte |
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Rohm |
(2SDxxxx) MEDIUM POWER TRANSISTOR |
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Rohm |
NPN SIlicon Transistor |
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