| No. | Partie # | Fabricant | Description | Fiche Technique |
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ROHM Electronics |
2SC5103 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0. |
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Rohm |
2SC5147 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. (Typ.3pF at VCB = 30V) 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of video signals. !Absolute maximum ratings (Ta=25°C) Par |
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Rohm |
High Voltage Switching Transistor 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96- |
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Rohm |
High speed switching transistor 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0. |
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Rohm |
NPN TRANSISTOR 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. (Typ.3pF at VCB = 30V) 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of video signals. !Absolute maximum ratings (Ta=25°C) Par |
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