No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Rohm |
1ch High-side switch ■ Built-in overcurrent protection circuit ■ Built-in Thermal Shut Down(TSD) ■ Built-in Open Load Detection circuit(When Output is OFF) ■ Possibility to control directly from CMOS logic IC ■ Low standby current ■ Built-in Under Voltage Lock Out circui |
|
|
|
VITROHM |
SMD Power Resistors < 1% < 0,25 no interruption suitble for wave and reflow soldering in acc. with CECC 0082 R [∆ R ]% R [∆ R ]% R [∆ R ] % R [∆ R ] % Thermal data according to DIN 44050 with solder pads as on next page. VITROHM PORTUGUESA, Lda. - Est.Nacional 249-4 |
|
|
|
Rohm |
1ch High-side switch ■ Built-in overcurrent protection circuit ■ Built-in Thermal Shut Down(TSD) ■ Built-in Open Load Detection circuit(When Output is OFF) ■ Possibility to control directly from CMOS logic IC ■ Low standby current ■ Built-in Under Voltage Lock Out circui |
|
|
|
ROHM |
MOSFET Single Synchronous Buck DC/DC Converter high-speed transient response. Phase compensation can also be set easily. Features ■ Synchronous Single DC/DC Converter ■ Over Current Protection ■ Thermal Shutdown Protection ■ Under Voltage Lockout Protection ■ Short Circuit Protection ■ Fixed Soft |
|
|
|
Rohm |
Medium Power Transistor 1) Low saturation voltage, typically VCE(sat)=0.12V at IC/ IB=500mA/50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base |
|
|
|
Rohm |
Power transistor 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base an |
|
|
|
Rohm |
TRANSISTORS |
|
|
|
Rohm |
2SC5060 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base an |
|
|
|
Rohm |
1ch High-side switch ■ Built-in overcurrent protection circuit ■ Built-in Thermal Shut Down(TSD) ■ Built-in Open Load Detection circuit(When Output is OFF) ■ Possibility to control directly from CMOS logic IC ■ Low standby current ■ Built-in Under Voltage Lock Out circui |
|
|
|
ROHM |
NPN 10A 20V Middle Power Transistor 1) Suitable for Middle Power Driver Base Emitter 2SC5001 (SC-63) |
|