| No. | Partie # | Fabricant | Description | Fiche Technique |
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Rohm |
Medium Power Amp / NPN Silicon Transistor |
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Rohm |
2SC2063 |
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Rohm |
2SC2058S 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. !External dimensions (Units : mm) 2SC5659 0.2 1.2 0.32 1.2 0.8 (2) (3) (1) 0.2 0.4 0.4 0.8 ROHM : VMT3 Unit V V V mA W ˚C ˚C 0.13 0to0.1 |
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Rohm |
General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors |
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Rohm |
NPN Transistor |
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Rohm |
2SC2021 |
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Rohm |
2SC2061 |
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Rohm |
NPN Transistor |
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ROHM |
SiC 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Circuit diagram Datasheet 1 10(N.C) 9 8(N.C) 3,4 5 6 7(N.C) 2 *Do not connect anything to NC pin. Construction This product is a chopper mo |
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Rohm |
2SC2062S 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2)Collect |
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Rohm |
High-frequency Amplifier Transistor 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. !External dimensions (Units : mm) 2SC5659 0.2 1.2 0.32 1.2 0.8 (2) (3) (1) 0.2 0.4 0.4 0.8 ROHM : VMT3 Unit V V V mA W ˚C ˚C 0.13 0to0.1 |
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Rohm |
High-gain Amplifier Transistor 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C 5.0 (1) (2) (3) zExternal dimensions (Unit : mm) SPT 4.0 2.0 3.0 (15Min.) 3Min. 0.45 |
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Rohm |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
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Rohm |
NPN Transistor |
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Rohm |
NPN Transistor |
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